skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Search for: All records

Creators/Authors contains: "Kostogiannes, Alexandros"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. Free, publicly-accessible full text available July 9, 2026
  2. Free, publicly-accessible full text available November 13, 2025
  3. The growth of atomic layer deposited (ALD) Al2O3 on planar ZnSe substrates is studied using in situ spectroscopic ellipsometry. An untreated ZnSe surface requires an incubation period of 27 cycles of ALD Al2O3 before film growth is observed. Pretreating the surface with an ultraviolet generated ozone lowers the incubation to 17 cycles, whereas a plasma-enhanced ALD Al2O3 process can further lower the incubation period to 13 cycles. The use of ozone or plasma-activated oxygen species on ZnSe is found to create ZnO and SeO2, which are responsible for converting ZnSe from a hydrophobic to a hydrophilic surface. The interfacial layer between Al2O3 and ZnSe is mapped using high-resolution transmission electron microscopy and scanning transmission electron microscopy/energy dispersive spectroscopy. SeO2 is volatile and leaves a zinc-rich interface, which is 4.3 nm thick for the ultraviolet generated ozone pretreated sample and 2.5 nm for the plasma-enhanced ALD process. 
    more » « less